Details of Valence Band Structure of p-GaAs/AIGaAs Symmetric Quantum Wells Unraveled by Uniaxial Compression

Abstract

Uniaxial compression has been applied to symmetrically grown quantum wells of GaAs with Be-modulation-doped barriers of AlGaAs. We demonstrate how the analysis of the influence of uniaxial compression on the Shubnikov de Haas oscillations can unravel details of the valence band structure; e.g. the question of whether or not the ground state is doubly degenerate or is consisting of two slightly different bands. We find the latter to be the case, and that the carrier densities in both of the two bands decrease under the application of the uniaxial compression; however, with different pressure coefficients.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012716

Entities

People

  • A. M. Savin
  • K. V. Pedersen
  • N. Y. Minina
  • O. P. Hansen

Organizations

  • University of Copenhagen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Compression
  • Electric Fields
  • Energy Bands
  • Frequency
  • Ground State
  • Hard Copy
  • Heterojunctions
  • Low Temperature
  • Magnetic Fields
  • Measurement
  • Oscillation
  • Physics
  • Quantum Wells
  • Spin-Orbit Interaction
  • Technical Information Centers
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Mechanical Engineering/Mechanics of Materials.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing