Electron Saturated Velocities in Silicon Carbide Polytypes for Drift Direction Along Crystal Axis

Abstract

The saturated drift velocity is a very important parameter of semiconductor crystals. It determines frequency limitation of semiconductor devices and consequently the range of the most effective application. Silicon carbide polytypes are not exclusion, Up to the present such velocities have been determined for two polytypes 4H and 6H SiC for direction perpendicular to crystal axis.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012720

Entities

People

  • A. A. Lepneva
  • V. I. Sankin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Charge Density
  • Compound Semiconductors
  • Crystals
  • Current Density
  • Dielectric Permittivity
  • Electric Fields
  • Electrical Properties
  • Electrons
  • Frequency
  • Impurities
  • P-N Junctions
  • Semiconductor Devices
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics