The Thickness Dependence of IR-Reflectance from Al Quantum Wells

Abstract

The first report on the optical properties of metallic quantum wells (MQWs) in the IR-region appeared in 1991 1. The quantum sized effects (QSEs) in MQWs are usually studied in 0.1 4 nm thickness range due to small wavelength for electrons on Fermi surface for almost all metals. In this report the room tempemture measurements on the IR (9.201 micrometers) linear p-polarized reflectivity (Rp) of Al-QWs deposited on SiO2 and Si substrates are presented for thickness range from 0.5 nm to 112 nm 2. Two type of (Rp) oscillations in depend from Al-layer thickness in two thickness range (0.5 3.4 nm and 6 11 nm) are observed.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012722

Entities

People

  • F. Pudonin
  • O. Keller
  • R. Villagomez

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Angle Of Incidence
  • Experimental Data
  • Fermi Surfaces
  • Films
  • Fourier Analysis
  • Hard Copy
  • Measurement
  • Metal Films
  • Optical Properties
  • Oscillation
  • Quantum Wells
  • Reflectance
  • Reflectivity
  • Substrates
  • Surface Roughness
  • Technical Information Centers
  • Thickness

Fields of Study

  • Materials science
  • Physics

Readers

  • Analytical Mechanics
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing