Auger Recombination in a Quantum Well in a Quantizing Magnetic Field

Abstract

Basic mechanisms of Auger recombination of non-equilibrium carriers in quantum wells in the presence of a longitudinal quantizing magnetic field are studied. It is shown that two different recombination mechanisms are present: (i) a resonant non-threshold mechanism, (ii) a quasithreshold mechanism The rate of the resonant Auger process depends on the temperature slightly but on the magnetic field essentially. For the quasithreshold Auger recombination process, the threshold energy depends on both the quantum well width and mgnetic field. It is shown that the resonant Auger process dominates at low temperatures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012724

Entities

People

  • G. G. Zegrya

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Auger Electrons
  • Band Gaps
  • Crystal Structure
  • Electron Electron Interactions
  • Electron Energy
  • Electrons
  • Energy
  • Energy Bands
  • Energy Conservation
  • Low Temperature
  • Magnetic Fields
  • Narrow Band Gap Semiconductors
  • Quantum Wells
  • Semiconductors
  • Two Dimensional
  • Valence Bands
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Electrochemical Surface Science
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots