Electronic Superstructures in Doped Semiconductor Superlattices

Abstract

We show that in doped semiconductor superlattices with narrow quantum wells at low temperatures and at sufficiently low doping levels, the exchange-correlation contribution to the system energy can exceed the sum of the kinetic and Hartree energies. Under these conditions, the uniform distribution of electrons over the wells becomes unstable, and the ground state corresponds to inhomogeneous distribution (electronic superstructure). For GaAs/GaAlAs superlattices the estimate of the critical doping concentration at which the stability of the homogeneous state at T = 0 K is lost yields the value of about 10(exp17)/cm3. lnhomogeneous ground states are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012725

Entities

People

  • I. P. Zuyagin

Organizations

  • Moscow State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystallization
  • Density Functional Theory
  • Electron Density
  • Electron Electron Interactions
  • Electron Gas
  • Electrons
  • Energy
  • Ground State
  • Kinetic Energy
  • Metastable State
  • Quantum Wells
  • Semiconductors
  • Spatial Distribution
  • Superstructures
  • Transitions
  • Two Dimensional
  • Wave Functions

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Key Distribution