Room Temperature Ballistic Transport in Deeply Etched Cross-Junctions

Abstract

We measured the transmission in nanoscopic cross-junctions at variable temperature. The devices were prepared by deep etching through a two-dimensional electron gas in InGaAs/InP samples. Our experiments show that the transmission characteristic is partly ballistic even at room temperature. The measrements are analysed in terms of an equivalent network, and the involved resistances are related to the electron mean free path.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012728

Entities

People

  • Jan-olof Wesstroem
  • Katharina Hieke

Organizations

  • Royal Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Dry Etching
  • Electrical Measurement
  • Electron Electron Interactions
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Etching
  • Fabrication
  • Low Temperature
  • Mean Free Path
  • Measurement
  • Metal-Semiconductor Junctions
  • Nanostructures
  • Resistance
  • Scattering
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Radio communications and signal processing.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics