Electron Velocity Modulation Under Lateral Transport in the Weakly-Coupled Double Quantum Well Structure

Abstract

Large electron velocity modulation was found under lateral transport in the GaAs/ AlGaAs weakly coupled quantum well structure. It manifests in extremely strong dependence of the lateral conductance on the transverse electric field (gate voltage) as well as in the step-like shape of the lateral current on the lateral (source-drain) voltage.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012732

Entities

People

  • I. P. Kazakov
  • P. I. Birjulin
  • S. P. Grisheckina
  • S. S. Shmelev
  • Yu. V. Kopaev

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electric Current
  • Electric Fields
  • Electron Mobility
  • Electron Transitions
  • Electrons
  • Equations
  • Fermi Levels
  • Field Effect Transistors
  • Hard Copy
  • Metal-Semiconductor Junctions
  • Modulation
  • Quantum Wells
  • Technical Information Centers
  • Transistors
  • Transport Properties
  • Transport Ships
  • Voltage

Fields of Study

  • Materials science

Readers

  • Control Systems Engineering.
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots