Steps Towards the Realization of Novel Prototype Functional Devices Using Scanning Probe Microscopy
Abstract
Moore's principle predicts that beyond the year 2010 the typical structure dimensions of electronic memory devices will fall below 70 nm. Apart from the necessity to develop suitable lithographic techniques for mass production of sub 100 nm features, the sole reduction of the structure dimensions (top down approach), while maintaining the present day device architecture, will result in physical obstacles, making the invention of novel designs for future devices indispensable. It what follows, we report on novel concepts for the fabrication of a single-electron transistor (SET) and a quantum interference transistor (QUIT), respectively
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1998
- Accession Number
- ADP012737
Entities
People
- E. Hartmann
- L. Samuelson
- M. Schwartzkopff
- P. Radojkovic
- T. Junno