Atomic Resolution Observation of GaAs Doped with Sn by Scanning Tunneling Microscopy

Abstract

Substitutional donor Sn(sub Ga) atoms in the near surface region below the GaAs (110) cleaved surface were observed by ultrahigh vacuum STM. Surface Sn atoms were observed as localized features, whereas subsurface Sn atoms have delocalized nature wfth the mean width of 2.5 nm. For an atom, elementary act of surface diffusion was observed and surface diffusion coefficient at room temperature was evaluated.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012739

Entities

People

  • L. Montelius
  • L. Samuelson
  • S. Y. Shapoval
  • U. Hakansson
  • V. L. Gurtovoi

Organizations

  • Lund University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bulk Materials
  • Coefficients
  • Cyclotron Resonance
  • Diffusion
  • Diffusion Coefficient
  • High Temperature
  • Materials
  • Microscopy
  • Nanostructures
  • Physics
  • Scanning
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Technical Information Centers
  • Ultrahigh Vacuum
  • Vacuum

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.