Interfaces Correlation Effect in 2D GaAs/AlAs Heterostructures

Abstract

A single 4.5-nm GaAs quantum well (QW) is grown into GaAs/AlAs superlattices (SL). For a sample with 120-s growth interruptionS (GI) at the GaAs surfaces we have exciton linewidth the same as for best quality GaAs/AlAs thin QW with long time GI at bottom and top interfaces. For the sample wfth 120-s and 20-s GI at the GaAs and AlAs surfaces, respectively, the smallest linewidth (1.4 meV) occurs when the AlAs thickness is exactly an integer number of monolayers (ML). Then each AlAs surface almost reproduces the large-island GaAs surface just below it (interface correlation effect), providing a better AlAs surface on which the QW is grown.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012747

Entities

People

  • A. Y. Chernyshov
  • G. Khitrova
  • H. M. Gibbs
  • I. E. Kozin
  • M. V. Belousov

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Diameters
  • Diffusion
  • Electron Gas
  • Electrons
  • Excitons
  • Hard Copy
  • Heterojunctions
  • Low Temperature
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Monomolecular Films
  • Quantum Wells
  • Reflection
  • Spectra
  • Technical Information Centers
  • Thickness

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing