Far Infrared Phenomena in P-Type MQW Heterostructures Under Lateral Electric Field

Abstract

Experimental investigation of the far-infrared (FIR) optical properties connected with intersubband and impurity-to-2D subband states transitions of holes in MQW ln(x)%Ga(1-x)As/GaAs and Ge/Ge(1-x)Si(x) heterostructures under lateral transport was pefformed. The mechanism of the inversion population and the far infrared amplification on the excited states to QW state transitions under lateral heating is proposed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012753

Entities

People

  • B. N. Zvonkov
  • N. Bekin
  • R. Zhukavin
  • V. N. Shastin
  • V. Y. Aleshkin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Absorption Cross Sections
  • Electric Fields
  • Far Infrared Radiation
  • Ground State
  • Heterojunctions
  • Infrared Phenomena
  • Infrared Radiation
  • Magnetic Fields
  • Optical Properties
  • Quantum Wells
  • Radiation
  • Substrates
  • Technical Information Centers
  • Transitions
  • Transparencies

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.