FIR Emission and Absorption Due to Indirect Optical Transitions of Hot Electrons in GaAs/AlGaAs QW

Abstract

Far-infrared (lambda = from 70 to 300 micrometers) spontaneous emission and modulation of absorption under heating 2D-electrons in strong electric field applied along GaAs/AlGaAs quantum layers are observed and investigated. Emission and absorption of light are connected with indirect transitions of hot electrons in ground subband of quantum well. Hot electron temperature is determined from comparing experimental emission spectra and theoretical ones taking into account optical phonon, impurity and interface roughness scattering as well as electron-electron scattering.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012754

Entities

People

  • D. V. Donetsky
  • E. B. Bondarenko
  • L. E. Vorobjev
  • S. N. Danilov
  • V. L. Zerovat

Organizations

  • Peter the Great Saint Petersburg State Polytechnical University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Crystal Lattice Vibrations
  • Electric Fields
  • Electron Mobility
  • Electron Scattering
  • Electron Transitions
  • Electrons
  • Emission Spectra
  • Far Infrared Lasers
  • Infrared Lasers
  • Quantum Wells
  • Radiation
  • Scattering
  • Spectra
  • Terahertz Radiation
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing