Far Infrared Emission and Possibility of Population Inversion of Hot Holes in MQW TnGaAs/GaAs Heterostructures Under Real Space Transfer

Abstract

Far IR emission and current-voltage characteristics of hot holes in strained MQW In(x)Ga(1-x)As/GaAs heterostructures at lateral charge transport are investigated. Highly nonequilibrium phenomena observed are shown to results from the real space transfer. The simple experimental criterion for the population inversion between barrier and quantum well states is put forward. The population inversion is shown to realize in "shallow" (with respect to the optical phonon energy) In(x)Ga(1-x)As quantum wells.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012755

Entities

People

  • A. A. Andronov
  • I. G. Malkina
  • N. A. Bekin
  • V. I. Gavrilenko
  • V. Y. Alsehkin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carrier Mobility
  • Crystal Lattice Vibrations
  • Cyclotron Resonance
  • Cyclotrons
  • Detectors
  • Electric Fields
  • Emission
  • Emission Spectra
  • Heterojunctions
  • Inversion
  • Magnetic Fields
  • Mobility
  • Quantum Wells
  • Radiation
  • Scattering
  • Spectroscopy
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Combustion and Flow Dynamics.
  • Regression Analysis.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing
  • Space
  • Space - Hall-Effect Thruster