IR Lasing Scheme on X-F Transitions Under Real Space Transfer in N-Type GaAs-AlAs-Like MQW Heterostructures

Abstract

New mechanisms for IR laser action on transition between X-valley states in AlAs and Gamma valley states in GaAs under Gamma-X intervalley transfer in GaAs and X valley GaAs-AlAs real space transfer is proposed. Ratio of occupation numbers in X-valleys to the numbers in F could be higher than 100 while amplification coefficient could be as high as 100/cm. In Ga(x)Al(1-x)As-Ga(y)Al(1-y)As MQW system, x < 0.4, y > 0.4 by changing composition the laser tunability from 3 to 100 micrometers could be achieved.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012756

Entities

People

  • A. A. Andronov
  • V. Y. Aleshkin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplification
  • Band Structures
  • Coefficients
  • Conduction Bands
  • Couplings
  • Electric Fields
  • Electronic Mail
  • Electrons
  • Energy Bands
  • Energy Levels
  • Gunn Effect
  • Hard Copy
  • Inversion
  • Scattering
  • Technical Information Centers
  • Transitions
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Space