Investigation of Hot Hole Distribution and Real Space Transfer by Interband Absorption in P-Type InGaAs/GaAs MQW Heterostructures

Abstract

Lateral electric field (up to 2 kV/cm) effects on transmittance in selectively doped p-type MQW In(x)Ga(1-x)As/GaAs heterostructures with delta-doped barriers have been studied. The peculiarities of the transmittance spectra associated wfth hole transitions from the acceptors to the quantum wells and with the hole escape from the quantum wells into the GaAs barriers have been observed. The hole effective temperature in the quantum wells and the population of impurity states in high electric fields were obtained.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012757

Entities

People

  • A. A. Andronov
  • A. V. Antonov
  • D. M. Gaponova
  • V. I. Gavrilenkov
  • V. Y. Aleshkin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Absorption
  • Conduction Bands
  • Data Acquisition
  • Electric Fields
  • Energy
  • Energy Bands
  • Fermi Levels
  • Heterojunctions
  • Impurities
  • Ionization
  • Modulation
  • Quantum Wells
  • Scattering
  • Spectra
  • Spectral Lines
  • Technical Information Centers
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Quantum Computing
  • Space
  • Space - Hall-Effect Thruster