Photoluminescence of 1.8 ML InAs Quantum Dots Grown by SMEE on GaAs(100) Misoriented Surface

Abstract

Photoluminescence (PL) study results of lnAs/GaAs quantum dot (QD) arrays obtained by submonolayer migration enhanced epitaxy on GaAs (100) substrates misoriented towards 001 DIRECTION AT InAs thickness fixed to 1.8 monolayers are reported. It is shown that PL peaks from QDs are shifted towards shorter wavelengths and their full width at half maxima decreases from 95 meV to 33 meV as misorientation angle raises from 0 to 7 degrees, corresponding to the decrease of mean lateral size of QDs and of the dispersion of their size distribution. The temperature dependence of PL spectra at 4.2-300 K may indicate to two maxima in the QDs size distribution.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012766

Entities

People

  • A. B. Novikov
  • B. V. Novikov
  • Dihn S. Thach
  • R. B. Juferev
  • S. Y. Verbin

Organizations

  • Peter the Great Saint Petersburg State Polytechnical University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Diffraction
  • Electron Diffraction
  • Emission
  • Emission Spectra
  • Energy
  • Energy Levels
  • Excitons
  • Hard Copy
  • High Energy
  • Instrumentation
  • Intensity
  • Quantum Dots
  • Semiconductors
  • Spectra
  • Substrates
  • Technical Information Centers
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing