Electron Transport in a Lattice of Dopped Many-Electrons Quantum Dots: A Gapless Hubbard Insulator

Abstract

Electron states and hopping conductivity of a periodic lateral lattice of large quantum dots are studied taking into account the Coulomb effects. The intradot electron-electron repulsion produces the Hubbard gap which exceeds the single-electron levels spacing. The fluctuations of the number of impurities per a dot causes the redistribution of electrons and softens the Hubbard gap. The energy of interdot exitation varies from zero to the dot charging energy U(sub c). The variable range hopping with the typical hopping energy determined by U(sub c) was demonstrated to be a predominant mechanism of low temperature transport.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012769

Entities

People

  • E. M. Baskin
  • M. V. Entin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Conductivity
  • Crystal Lattices
  • Dielectrics
  • Electron Density
  • Electron Electron Interactions
  • Electron Gas
  • Electrons
  • Energy
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Fermi Levels
  • Heat Of Activation
  • High Temperature
  • Low Temperature
  • Quantum Dots
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots
  • Space