The Effect of 1.06 mu m Illumination on the Photoluminescence of TnAs/GaAs Quantum Dots

Abstract

Optical experiments with self-organised InAs/GaAs quantum dots (QD) show high quantum efficiency of photoluminescence (PL) which is important for laser applications. However the channels of nonradiative carrier recombination which competes with PL in QDs are not understood yet. In the present contribution we study the effect of enhancement of PL quantum efficiency of InAs/GaAs QDs induced by subband 1.06 micrometer illumination.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012772

Entities

People

  • A. V. Scherbakov
  • Andrei V. Akimov
  • D. A. Mazurenko
  • D. L. Fedorov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Argon Lasers
  • Efficiency
  • Electrons
  • Hard Copy
  • Illumination
  • Laser Applications
  • Lasers
  • Nanostructures
  • Photoluminescence
  • Quantum Dots
  • Quantum Efficiency
  • Radiation
  • Spectra
  • Spectral Lines
  • Technical Information Centers
  • Yag Lasers

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing