Quantum Mott Transition in Mesoscopic Semiconductors

Abstract

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012775

Entities

People

  • R. J. Haug
  • S. V. Vyshenski
  • U. Zeitler

Organizations

  • Moscow State University

Tags

DTIC Thesaurus Topics

  • Conduction Bands
  • Dielectric Permittivity
  • Electrodes
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Hard Copy
  • High Temperature
  • Impurities
  • Materials
  • Metal-Insulator Transitions
  • Quantum Dots
  • Quantum Tunneling
  • Semiconductors
  • Technical Information Centers
  • Transitions
  • Tunneling

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots