Proposal for Neutral Donors in Quantum Wells to Act as Charge Storage Centres for Room Temperature Single Electron Memories
Abstract
This work discusses a range of semiconductor materials, and demonstrates that in a II-VI compound semiconductor, the neutral donor binding energy can be enhanced with the addition of a quantum well confining potential, to a value greater than kT at room temperature and simultaneously greater than the longitundinal optic phonon energy. Thus room ten1perature occupation is a possibility. The application of this nanoscale localisation centre as a single electron memory is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1998
- Accession Number
- ADP012776
Entities
People
- P. Harrison
Organizations
- University of Leeds