InAs Nanoscale Islands on Si Surface: A New Type of Quantum Dots

Abstract

We study epitaxial growth of InAs on Si(100) surface using molecular beam epitaxy. We found that at moderate arsenic fluxes and substate tempeartures (470 C) the growth proceeds in Stranski-Krastanow growth mode with formation of mesoscopic dislocated clusters on top of the two-dimensional periodically-corrugated InAs wetting layer. At lower temperatures (250 C) a dense array of selof-orgarnized nanoscale InAs quantum dots with good size and shape uniformity is formed.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012779

Entities

People

  • G. E. Cirlin
  • N. K. Polyakov
  • N. P. Korneeva
  • V. G. Dubrovskii
  • V. N. Petrov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Curing
  • Diffusion Coefficient
  • Electron Diffraction
  • Energy
  • Epitaxial Growth
  • Fabrication
  • High Temperature
  • Low Temperature
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Nanostructures
  • Optical Properties
  • Quantum Dots
  • Surface Energy
  • Three Dimensional
  • Two Dimensional

Readers

  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing