Self-Assembled Formation of Quantum Dots During InGaAlAs Quantum Well Growth

Abstract

We demonstrate that InGaAlAs layers with very low average indium composition effectively decompose to In-rich nanoscale domains during epitaxial growth. The resulting quantum dots have significant localization energies as follows from temperature dependencies of the corresponding PL lines.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012781

Entities

People

  • A. V. Sakharov
  • I. L. Krestnikov
  • I. P. Soshnikov
  • N. N. Ledentsov
  • Yu. G. Musikhin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Electron Microscopy
  • Emission Spectra
  • Epitaxial Growth
  • Excitation
  • Hard Copy
  • Low Temperature
  • Luminescence
  • Molecular Beam Epitaxy
  • Phase
  • Phase Separation
  • Quantum Dots
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Technical Information Centers
  • Transitions
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing