Indium Segregation Effects During GaAs Cap-Layer Growth on InAs-Quantum Dots Monitored by Reflectance Anisotropy Spectroscopy

Abstract

Performing Reflectance Anisotropy Spectroscopy (RAS) measurements during GaAs cap-layer growth on InAs quantum dots (QD) lndium segregation effects were monitored in-situ. Segregation during growth was found to be enhanced for elevated growth temperatures (775 K) and low cap-layer growth rates. A later intemixing of the islands with the GaAs cap-layer was observed during post-growth thermal annealing. For thin caps (10 nm) the RAS spectra became more and more InAs-like (2 x 4-like) while for 20 nm GaAs-cap-layers a smoothening of the surface but no indium related structure was found.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012782

Entities

People

  • E. Steimetz
  • J. T. Zetter
  • T. Trepk
  • T. Wehnert
  • W. Richter

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Anisotropy
  • Annealing
  • Energy
  • Hard Copy
  • High Energy
  • Materials
  • Measurement
  • Nanostructures
  • Quantum Dots
  • Quantum Wells
  • Reflectance
  • Spectra
  • Spectroscopy
  • Technical Information Centers
  • Thickness
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing