InAs Self-Organized Quantum Dots Grown by MOVPE in In0.53Ga0.7As Matrix

Abstract

The results of the self-assembling Stranski-Krastanow growth of InAs quantum dots embedded in In(0.53)Ga(0.47)As by low pressure MOVPE are presented. The structures were investigated by room and liquid nitrogen photoluminescence methods. The highest obtained emission wavelength of 2.1 micrometers at room temperature is the longest value for InAs quantum dots reported in literature until now.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012784

Entities

People

  • D. A. Vinokurov
  • I. S. Tarasov
  • O. V. Kovalenkov
  • V. A. Kapitonov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Argon Lasers
  • Emission
  • High Resolution
  • Ion Lasers
  • Lasers
  • Materials
  • Materials Processing
  • Molecular Spectroscopy
  • Nanostructures
  • Optoelectronic Devices
  • Quantum Dots
  • Radio Frequency
  • Semiconductor Lasers
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Substrates

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing