Modelling the Self-Organization of Boron Clusters in Silicon

Abstract

The paper illustrates application the theory of self organization to practical problems in the physics on nanostructures. Starting from the principles of the theory of self-organization, the formation of dissipative structures as found experimentally in annealed highly-boron-doped silicon samples is explained. A qualitative "reaction-diffusion" model is developed which reproduces the formation of spatially ordered boron clusters distribution in the form of equidistant maxima. Perspectives of more exact quantitative models describing the extraordinary evolution of boron dopant in silicon are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012785

Entities

People

  • A. B. Potapov
  • G. G. Malinetskii
  • M. G. Stepanova

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Applied Mathematics
  • Coefficients
  • Diffusion
  • Diffusion Coefficient
  • Feedback
  • Hard Copy
  • Implantation
  • Ion Implantation
  • Mathematics
  • Nanostructures
  • Precipitation
  • Self Organizing Systems
  • Spatial Distribution
  • Technical Information Centers
  • Three Dimensional

Fields of Study

  • Physics

Readers

  • Nanocomposite Materials Science
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene