Investigation of Self-Organized Nanoheterostructure Properties in InGaAsP Solid Solutions

Abstract

Properties of self organized InGaAsP nanoheterostructures grown on InP and GaAs substrates have been investigated by photoluminescence and transmission electron microscopy (TEM) methods. The dependence of epitaxial growth temperature and solution supercooling on the rate of self-organization of periodical InGaAsP nanoheterostructures has been determined. Periodical picture in the plan view and cross Section of TEM image of InGaAsP epitaxal layers have been observed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012787

Entities

People

  • I. N. Arsent'ev
  • I. S. Tarasov
  • L. S. Vavilova
  • N. A. Bert
  • V. A. Kapitonov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Diffusion Coefficient
  • Electron Microscopes
  • Electron Microscopy
  • Epitaxial Growth
  • Images
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Liquids
  • Microscopes
  • Microscopy
  • Nanostructures
  • Photoluminescence
  • Self Organizing Systems
  • Solid Solutions
  • Spinodal Decomposition
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics