InGaAs Quantum Wires in 110 and 110 Gratings: Two V-Grooves Directions, Two Behavior of the Regrowth Interface

Abstract

InGaAs quantum wires are obtained by holographic lithography and MBE regrowth on V-grooves. The influence of some fabrication steps on the interface is presented. The 110 and 11-BAR0 gratings are compared in terms of etching profiles and the evolution of the grating shape during the desorption and the epitaxial regrowth.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012788

Entities

People

  • C. Gourgon
  • Daniel C. Martin
  • F. Filipowitz
  • J. Robadey
  • Y. Magnenat

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Absorption Spectra
  • Chemical Etching
  • Desorption
  • Distributed Feedback Lasers
  • Electron Beam Lithography
  • Electron Microscopy
  • Etching
  • Fabrication
  • Ground State
  • Laser Beams
  • Lasers
  • Optical Properties
  • Optics
  • Quantum Cascade Lasers
  • Quantum Wells
  • Quantum Wires
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing