Enhanced Two-Dimensional Precipitation of Excess As in LT-GaAs Delta-Doped with Sb

Abstract

We have used, for the first time, isovalent delta-doping with antimony instead of indium to produce two-dimensional sheets of arsenic nano-clusters in GaAs films grown by molecular beam epitaxy (MBE) at low (200 C) ten%peratuw. The precipitation kinetics at Sb delta-layers is found to be enhanced as compared to that for In delta-doping. It provides an opportunity to improve the cluster spatial ordering. In addition, at early precipitation stages, the microstructure, morphology and orientation relationship of the clusters attached to Sb delta-layers are found to differ from those conventional for As clusters in LT-GaAs films including As clusters at the In delta-layers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012790

Entities

People

  • A. A. Kosogov
  • A. A. Suvorova
  • N. A. Bert
  • V. V. Chaldyshev
  • V. V. Preobrazhenskii

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Carrier Mobility
  • Charge Carriers
  • Electron Microscopy
  • Films
  • High Resolution
  • Materials
  • Microscopes
  • Microstructure
  • Nanostructures
  • Point Defects
  • Precipitation
  • Semiconductor Physics
  • Semiconductors
  • Spatial Distribution
  • Surface Roughness
  • Two Dimensional

Fields of Study

  • Materials science

Readers

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  • Semiconductor Device Technology