Delta-Doping of GaAs by Sn

Abstract

GaAs Structures delta-doped by Sn with various densities of Sn have been grown and investigated. The Hall effect and Shubnikov de Haas effect have been investigated for temperatuws 0.4 K < T < 12 K in magnetic fields up to 38 T. The maximum density of free electrons achieved was 8.3(exp 10 13/cm-sq.). The resistance oscillations observed for a magnefic field parallel to the delta-layer were associated with singularities in the calculated density of states.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012791

Entities

People

  • M. B. Vvedensky
  • R. A. Lunin
  • V. A. Kulbachinskii
  • V. G. Kytin
  • V. G. Mokerov

Organizations

  • Moscow State University

Tags

DTIC Thesaurus Topics

  • Conduction Bands
  • Electrons
  • Energy Bands
  • Equations
  • Fermi Levels
  • Free Electrons
  • Hall Effect
  • Hard Copy
  • Impurities
  • Low Temperature
  • Magnetic Fields
  • Magnetoresistance
  • Mobility
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Poisson Equation
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics