GaN Grown on (101) Neodium Gallate by MBE with Magnetron RF Plasma Source
Abstract
This paper reports on the first successful attempt of MBE GaN epitaxial growth on the neodim gallate substrates. We demonstrated also the feasibility for the III-nitrides MBE growth of an original compact coaxial magnetron (CCM) plasma source with radio-frequency (RF) capacitively coupled discharge, compatible with modern MBE requirements. This source has allowed us to reach the growth rates as high as 0.1 to about 0.5 microns/h with good GaN crystalline quality. Electrical, structurel and luminescence properties of GaN films have been examined.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1998
- Accession Number
- ADP012793
Entities
People
- A. A. Toropov
- T. V. Shubina
- V. A. Vekshin
- V. N. Jmerik
- V. V. Mamutin
Organizations
- Russian Academy of Sciences