Resonant Waveguiding and Lasing in Structures with InAs Submonolayers in an AlGaAs Matrix

Abstract

This work studies optical properties III-V structures with SML InAs insertions in an AlGaAs matrix. Lasing under photoexcitation is demonstrated for the structure without external optical confinement. Lasing occurs on a low energy side of the exciton resonance at low excitation densities pointing to the importance of this structures for improved optical confinement in AIGaAs injection laser operating in the visiblel range, excitonic waveguides and self-adjusted microcavities.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012815

Entities

People

  • A. F. Tsatsul'nikov
  • A. Y. Egorov
  • B. V. Volovik
  • M. V. Maximov
  • N. N. Ledentsov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Energy Levels
  • Excitation
  • Ground State
  • Intensity
  • Laser Beams
  • Lasers
  • Long Wavelengths
  • Low Density
  • Low Temperature
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Dots
  • Quantum Wells
  • Refractive Index
  • Semiconductors
  • Short Wavelengths

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics