Radiative Characteristics of InAs/InGaAs/InP Quantum Dot Injection Lasers

Abstract

Quantum dot (QD) heterostructures have recently became the subject of the intensive research. tnjection lasers with an active region based on InGaAs/AlGaAs QD have shown ultralow threshold current density (J(subth)). However the emission wavelength of QDs formed on GaAs substrate is limited by the value of 1.3 microns. It has been previously shown that the QD emission range can be extended up to 2 microns by embedding the InAs QDs into an InGaAs matrix grown on InP substrate. In this work we study threshold, tempemture and power characteristics of InAs/InGaAs/InP injection lasers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012821

Entities

People

  • A. R. Kovsh
  • A. Y. Egorov
  • N. Y. Gordeev
  • S. V. Zaitsev
  • V. I. Kopchatov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Counter IED

DTIC Thesaurus Topics

  • Current Density
  • Efficiency
  • Emission
  • Hard Copy
  • Heterojunctions
  • Laser Resonators
  • Lasers
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Quantum Dot Lasers
  • Quantum Dots
  • Quantum Efficiency
  • Substrates
  • Technical Information Centers
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing