IR Luminescence (1.6-1.9 mu m) of Compressive-Strained InGaAs/InP Quantum Wells Grown by MOVPE

Abstract

We report metal-organic chemical-vapor deposition-grown In(x)Ga(1-x)As/In(0.53)Ga(0.47)As/InP double heterostructures emitting at 1.65-1.85 micrometers at room temperature. The active region consists of a 25-100 A thick compressively strained In(x)Ga(1-x)As quantum wells with composition x in interval 0.69-0.81. Companson with our theoretical results shows that the shape of our quartum wells grown by metal-organic vapour phase epitaxy is not rectangular.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012823

Entities

People

  • D. A. Vinokurov
  • I. S. Tarasov
  • O. V. Kovalenkov
  • V. A. Kapitonov
  • Z. N. Sokolova

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electron Transitions
  • Energy Bands
  • Energy Gaps
  • Experimental Data
  • Heterojunctions
  • High Resolution
  • Lasers
  • Long Wavelengths
  • Molecular Spectroscopy
  • Optoelectronic Devices
  • Quantum Wells
  • Radio Frequency
  • Semiconductor Lasers
  • Semiconductors
  • Technical Information Centers
  • Thickness

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing