Near-Field Radio-Frequency Modulated Reflectance in Semiconductor Structures

Abstract

This paper suggests Near-field configuration Radio-frequency Modutated light Reflectance technique (NRMR). NRMR spectra from GaAs/AlGaAs heterostructure were experimentally obtained. These spectra demonstrate a dramatic change in the reflectance. We have shown that the near-field radio-frequency perturbation are transferred along the heterostucture plane over extremely large distances which may be as large as several millimeters.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012826

Entities

People

  • A. O. Volkov
  • O. A. Ryabushkin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electric Fields
  • Electrodes
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Frequency
  • Heterojunctions
  • High Electron Mobility Transistors
  • Intensity
  • Low Temperature
  • Modulation
  • Near Field
  • Optical Properties
  • Radio Frequency
  • Reflectance
  • Semiconductors
  • Spectra

Readers

  • Clinical Trial Research.
  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics