Admittance Spectroscopy of Schottky Barrier Structures with Self-Assembled InAs/GaAs Quantum Dots

Abstract

Capacitance and conductance voltage characteristics have been measured at various frequencies and temperatures for a Schottky barrier structure containing three sheets of self assembled InAs quantum dots in an n-GaAs matrix. By changing the temperature and the frequency of the measuring signal, it is possible to control quantum dot part of capacitance of the structure. It was shown that analysis of the admittance spectra allows us to obtain information about dynamic parameters of quantum dots.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012827

Entities

People

  • A. A. Suvorova
  • A. E. Zhukov
  • A. R. Kovsh
  • A. Y. Egorov
  • P. N. Brounkov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Capacitance
  • Conduction Bands
  • Electron Microscopy
  • Electrons
  • Emission
  • Fermi Levels
  • Frequency
  • Low Temperature
  • Quantum Dots
  • Quantum Wells
  • Space Charge
  • Spectra
  • Spectroscopy
  • Technical Information Centers
  • Thermionic Emission
  • Transmission Electron Microscopy
  • Unmanned Vehicles

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing