Space-Charge Spectroscopy of Self-Assembled Quantum Dots InAs in GaAs

Abstract

Semiconducting structure containing the planes of self assembled InAs quantum dots (QD) in the GaAs matrix are studied by means of junction space charge spectroscopy methods. The effects associated with low temperature GaAs covering layer, with the wetting layer (WL) and with QDs itself are separated. It is found that DLTS signal in the structures with the high density of the QD exhibits not usual properties. A new model is proposed that takes into account the electron capture from the free electron "lake" arising due to a large repulsive barrier of the QD planes.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012829

Entities

People

  • A. R. Kovsh
  • A. Y. Egorov
  • N. V. Bazlov
  • O. A. Trofimov
  • O. F. Vyvenko

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Electron Capture
  • Electron Density
  • Electron Emission
  • Electron Microscopy
  • Electron Transitions
  • Electrons
  • Emission
  • Free Electrons
  • Heat Of Activation
  • High Temperature
  • Low Temperature
  • Quantum Dots
  • Semiconductors
  • Space Charge
  • Spectra
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Space