Observation of a Martensitic Transition in the Raman Spectra of Ordered GaInP

Abstract

We have observed a strong dependence of the intensity of the ordering-induced phonon bands on thermal treatment (rapid cooling and annealing) in Ranmn spectra (RS) of CuPt(sub-B) ordered Ga(0.5)In(0.5)P alloys. The changes of the Raman intensity occur only in diagonal backscattering configuration: y'\\ 1-BAR,1,0, where the polarization of light is parallel to the mirror planes of the ordered structure. We found that there are at least two different intensity distributions of the optical phonon bands the appearance of which is determined by thermal treatment and the alloy film thickness. The bond polarizability model analysis shows that the observed RS behaviour can be described in terms of the order-disorder martensitic transition on trigonal lattice sites.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012832

Entities

People

  • A. M. Mintairov
  • A. S. Vlasov
  • D. V. Vinokurov
  • J. L. Merz

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Annealing
  • Atoms
  • Backscattering
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electric Fields
  • Electrical Engineering
  • Films
  • Intensity
  • Phase Separation
  • Phase Transformations
  • Phonons
  • Raman Spectra
  • Scattering
  • Spectra
  • Technical Information Centers
  • Transitions

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology