Atomic Force Microscopy and Structural Studies of MBE-Grown CdF2 Layers on CaF2(111)

Abstract

The possibility of epitaxial CdF2 growth on CaF2 (1-bar,1,1) substrates in a wide growth temperature range of 100 - 500 C has been demonstrated, It is found that there are pyramidal mounds on CdF2 with a typical lateral size 30-60 nm at 100 C and 100-150 nm at 300 C. The angle between its facets and the growth plane is about 10 deg. At higher growth temperatures, the surface morphology drastically changes to large (1000-1500 nm) round islands formed by one-monolayer steps and 100 nm terraces. This indicates layer-by-layer growth. The RBS and XRD measurements show that the crystalline quality of the structures rapidly improves with the growth temperature.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012833

Entities

People

  • M. M. Moisseeva
  • N. S. Sokolov
  • R. N. Kyutt
  • S. M. Suturin
  • Yu V. Shusterman

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystals
  • Diffraction
  • Diffractometers
  • Energy
  • Epitaxial Growth
  • Films
  • Free Energy
  • High Resolution
  • High Temperature
  • Measurement
  • Molecular Beams
  • Scattering
  • Substrates
  • Technical Information Centers
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Thin Film Deposition Science.