Optical Transitions in Quantum Wells and Quantum Dots Based on SiGe Heterostructures
Abstract
The growth of GeSi nanoislands and photoluminescenee features in structures with localized states of electrons and holes are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1998
- Accession Number
- ADP012836
Entities
People
- A. V. Novikov
- N. A. Bekin
- N. G. Kalungin
- V. Y. Aleshkin
- Z. F. Krasil'nik
Organizations
- Russian Academy of Sciences