Hole Levels in Ge Self-Assembled Quantum Dots Probed with Room Temperature Capacitance Spectroscopy

Abstract

Pyramidal Ge islands with the areal density 4 x 10(exp11)/cm2 and the typical base length 12 nm% have been grown on p-type Si (1OO) substrates at 300 C by molecular beam epitaxy. Capacitance spectroscopy was used to determined the allowed energy levels for holes in these quantum dots. At room temperature we observed the capacitance peaks with five types of spacings as a function of the gate voltage. The oscillations with largest period are attributed to the discrete quantum level structure while the peak splitting is a result of charging of dots by individual holes. The Coulomb charging energy is found to decrease wfth increasing of excited level number.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012838

Entities

People

  • A. I. Nikiforov
  • A. I. Yakimov
  • A. V. Dvurechenskii
  • O. P. Pchelyakov
  • V. A. Markov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Capacitance
  • Electrons
  • Energy Levels
  • Epitaxial Growth
  • Fermi Levels
  • Ground State
  • Hard Copy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Dots
  • Semiconductor Physics
  • Semiconductors
  • Spectroscopy
  • Technical Information Centers
  • Three Dimensional
  • Transition Temperature
  • Wave Functions

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots
  • Space