Mechanism of Photoluminescence from Sl-Nanocrystals Fabricated in SiO2 -Matrix

Abstract

The luminescence properties of silicon nanocrystals formed by Si ion implantation into SiO2 matrix and a subsequent thermal annealing have been studied. For identification of PL mechanism the dependencies of cw PL on temperature and excitation power density, and time-resolved PL have been investigated. Expenmental results point to the mechanism of recombination via the levels of centers which are localized on the silicon nanocrystal-silicon dioxide boundary

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012839

Entities

People

  • A. M. Gilinsky
  • A. Y. Kobitsky
  • K. S. Zhuravlev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Boundaries
  • Charge Carriers
  • Diffraction
  • Energy Bands
  • Excitation
  • Frequency
  • Heat Treatment
  • Intensity
  • Ion Implantation
  • Luminescence
  • Metastable State
  • Nanocrystals
  • Nanostructures
  • Photoluminescence
  • Silicon Dioxide
  • Spectra

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology