Fabrication of SiGe Quantum Wires by Self-Assembled Local Molecular Beam Growth
Abstract
One-dimensional SiGe structures were grown by molecular beam epitaxy on mesa-patterned Si (100) and (111) substrates. The effect of temperature and deposition rate on faceting of local epitaxial Si and SiGe structures was studied in temperature range from 45O C to 900 C. Scanning electron microscopy revealed that the increase of growth temperature and/or the decrease of deposition rate result in faceting of the growing structures. Epitaxial structures with Si(.75)Ge(.25) quantum wires 4 nm in thickness and 30-50 nm in width separated by 30-nm Si barriers were grown. Low-temperature luminescence spectra of these structures were obtained.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1998
- Accession Number
- ADP012842
Entities
People
- A. F. Vyatkin
- N. F. Izumskaya
- V. A. Yunkin
- V. S. Avrutin
Organizations
- Russian Academy of Sciences