The Growth Kinetics of Si1-xGex Layers from Germane and Silane

Abstract

The present paper offers a model of the growth kinetics of Si(1-x)Ge(x) layers from silane and germane molecular flows. The model considers disintegration of silane and germane molecules from chemisorption to formation of Si and Ge adatoms and their embedding in a crystal lattice. The numerical modeling of the epitaxial process has shown good agreement with the experimental data and has allowed to explain peculiarities of the experimental dependencies. The effective frequencies of SiH3 and SiH disintegration for the considered epitaxial method were estimated.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012844

Entities

People

  • A. V. Potapov
  • L. K. Orlov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Adsorption
  • Chemisorption
  • Crystal Lattices
  • Desorption
  • Disintegration
  • Experimental Data
  • Frequency
  • Hard Copy
  • Heat Of Activation
  • High Temperature
  • Hydrogen
  • Kinetics
  • Low Temperature
  • Molecules
  • Nanostructures
  • Surface Temperature
  • Technical Information Centers

Readers

  • Computational Modeling and Simulation
  • Military History / Militaries and War Studies
  • Thin Film Deposition Science.