Enhancement of the Nonlinear Response of the Semiconductor Tunnel Structures in the Skin-Effect Regime

Abstract

Nonlinear AC response of the semiconductor barrier semiconductor structures is considered. It is shown that in the vicinitv of the barrier a low frequency plasma excitations junction ptasma polaritons (JPPs) are excited on high frequencies. The excitation of JPPs has a substantial effect on the rectification properties of the structures in the skin-effect regime (on the frequency of 100 GHz and higher for the typical parameters of the structures). It leads to an essential increase in the rectified voltage. Its increase could be as large as one order of magrntude for the typical parameters of the structures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012848

Entities

People

  • M. N. Feiginov
  • V. A. Volkov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplification
  • Atomic Structure
  • Electric Charge
  • Electric Current
  • Electron Mobility
  • Electrons
  • Excitation
  • Frequency
  • Impedance
  • Long Wavelengths
  • Magnetic Fields
  • Nanostructures
  • Relaxation Time
  • Semiconductor Devices
  • Semiconductors
  • Technical Information Centers
  • Voltage

Readers

  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics