Transition from Coherent to Incoherent Superlattices Transport

Abstract

Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattices. In a three terminal transistor type device an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as a function of the injector energy. Resonances in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice. By analysing the transfer ratio of superlattices at various bias conditions miniband positions and miniband widths are determined. A significant decrease of the miniband transmission is observed wfth increasing electric field accross the superlattice, which is attributed to the the quenching of coherent transport. For longer superlattices an asymmetry between positive and negative bias is found which is asigned to the transition between coherent and incoherent transport.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012850

Entities

People

  • C. Rauch
  • E. Gornik
  • G. Strasser

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accumulators
  • Band Gaps
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electric Fields
  • Electron Beams
  • Electron Energy
  • Electron Spectroscopy
  • Electrons
  • Energy
  • Energy Bands
  • Quantum Tunneling
  • Resonant Tunneling Diodes
  • Scattering
  • Spectroscopy
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene