Single Photon Turnstile Device
Abstract
A single-photon turnstile device based on a simutaneous Coulomb blockade effect for electrons and holes was demonstrated in a misoscopic double-barrier p-n junction. The current-voltage characteristics at 50 mK featured three plateaus at 1 ef, 2ef, and 3ef, where f is an external modulation frequency. The emitted photon was detected by a Si solid-state photomultiplier with a quantum efficiency of > 90%, multiiplication gain of about 30,000, response time of 2 ns, and absolutely no excess noise. The emitted photons at the first current plateau were well localized at the rising edge of the driving pulse as expected.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1998
- Accession Number
- ADP012851
Entities
People
- B. Kim
- H. Kan
- O. Benson
- Yoshihisa Yamamoto
Organizations
- Stanford University