LO Phonon Mediated Relaxation in InP Self Assembled Quantum Dots in Electric Field

Abstract

Strong LO phonon resonances are found in the photoluminescence spectra of InP self assembled quantum dots under an applied bias. These arise from fast phonon assisted relaxation when the applied bias suppresses the photoluminescence.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012857

Entities

People

  • H. W. Rent
  • I. E. Kozin
  • I. V. Ignatiev
  • S. Sugou
  • Sreejith Nair

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Brillouin Zones
  • Crystal Lattice Vibrations
  • Electric Fields
  • Excitation
  • Experimental Data
  • Intensity
  • Materials
  • Phonons
  • Photons
  • Quantum Dots
  • Quantum Wires
  • Quantum Yields
  • Raman Scattering
  • Resonance
  • Semiconductors
  • Spectra
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots