"Unusual" Temperature Behavior of the Photoluminescence of the InP and InGaAs Quantum Dots Under Quasiresonance Excitation

Abstract

A few unusual temperature effects are observed in the photoluminescence (PL) spectra and PL kinetics of heterostructures with self assembled InP and InGaAs quantum dots (QDs) under the excitation within the PL band of QDs. It is found that the temperature rise leads to a considerable increase of the Stokes part of the PL. The analysis of this phenomenon and PL kinetics is based on the assumption about the slow relaxation of hot carriers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012863

Entities

People

  • H. W. Ren
  • I. E. Kozin
  • I. V. Ignatiev
  • J. Lee
  • V. Davydov

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Continuous Spectra
  • Detection
  • Electric Fields
  • Electron Holes
  • Energy
  • Energy Transfer
  • Excitation
  • Experimental Data
  • High Temperature
  • Intensity
  • Kinetics
  • Low Temperature
  • Quantum Dots
  • Quantum Wires
  • Resonance
  • Spectra
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing