Effect of GaAs (001) Surface Misorientation on the Emission from MBE Grown InAs Quantum Dots
Abstract
The photoluminescence (PL) is used to study the capped InAs QDs single sheet array MBE grown on the vicinal GaAs (001) surfaces misoriented to the 010 direction by 0, 2, 4, 6 degree. The misorientation leads to the blue shift and the narrowing of bias QDs PL lines and makes PL efficiency higher. These effects are related. respectively. with the smaller size and higher size uniformity of the InAs QDs and reduction of the number of large InAs islands on the misoriented surfaces. It was found that decrease of the growth interruption time between the end of QDs growth and start of the GaAs layer overgrowth makes these modifications of the PL spectra with surface misorientation stronger and efficiency of the PL higher. With the use of misoriented substrates. single sheet QDs laser with threshold current density of 210 A/cm2 at room temperature was realized.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1999
- Accession Number
- ADP012864
Entities
People
- A. S. Shkolnik
- A. V. Kryganovskii
- E. Y. Kotel'nikov
- I. V. Kudryashov
- V. P. Evtikhiev
Organizations
- Russian Academy of Sciences