Cold Anti-Stokes Photoluminescence of InP Self-Assembled Quantum Dots in the Presence of Electric Current

Abstract

An intense anti-Stokes photoluminescence is observed in a structure with InP quantum dots in the presence of a direct electric current and cw optical pumping below the lowest electron hole transition in the quantum dots. A simple model is proposed for the explanation of the observed phenomenon. Its essential point is the existence of deep level defects around the QDs.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1999
Accession Number
ADP012865

Entities

People

  • H. W. Rent
  • I. Ignatiev
  • I. Kozin
  • S. Sugou
  • Y. Masumoto

Organizations

  • Saint Petersburg State University

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Electric Current
  • Electrons
  • Energy Bands
  • Excitation
  • Experimental Data
  • Heterojunctions
  • Intensity
  • Lasers
  • Low Temperature
  • Optical Properties
  • Optical Pumping
  • Quantum Dots
  • Quantum Efficiency
  • Quantum Wires
  • Semiconductors
  • Spectra
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing